The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

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The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. Both controlling and power signals are available on pin strip for easy connection to customer's board. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.

LM5045 Full-Bridge PWM Controller With Integrated MOSFET Drivers 1 Features 3 Description The LM5045 PWM controller contains all of the. LO1 23 19 Alternating output of the PWM gate driver. Capable of 1.5-A O Low Side Output Driver LO2 20 16 peak source and 2-A peak sink current. Jan 11, 2019 - Full-Bridge PWM Gate Driver. Allegro MicroSystems, LLC. 955 Perimeter Road. Manchester, NH U.S.A.

The A4957 is a full-bridge controller for use with external N-channel power MOSFETs and is specifically designed for applications with high-power inductive loads such as brush DC motors. A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages down to 7 V and allows the A4957 to operate with a reduced gate drive, down to 4.5 V. A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs. A unique bootstrap charge management system ensures that the bootstrap capacitor is always sufficiently charged to supply the high-side gate drive circuit. Each of the power MOSFETs is controlled independently but all are protected from shoot-through by dead time that is userconfigured by an external resistor. Integrated diagnostics provide indication of undervoltage and overtemperature faults.

The A4957 is supplied in a 24-contact 4 mm × 4 mm × 0.75 mm QFN with an exposed pad for enhanced thermal dissipation. It is lead (Pb) free, with 100% matte tin leadframe plating (suffix –T).